IKZA40N120CH7XKSA1
										
																					IKZA40N120CH7XKSA1
												
													Description: 
													IGBT 1200V 40A 2,5V TO247-3
												
																									
														Produttore:
																																											INFINEON
																											
																																					
														Matchcode:
														IKZA40N120CH7
													
																																					
														Rutronik No.:
														IGBT3207
													
																																				
													VPE:
													30
												
																									
														MOQ:
														240
													
																																					
														dimensioni:
														TO247-3
													
																																					
														confezione:
														TUBE
													
																							
										
																		
										
										
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- V(CE)
 - 1200 V
 - I(C)
 - 40 A
 - V(CEsat)
 - 1.7 V
 - Package
 - TO247-3
 - Bodydiode
 - NO
 - P(tot)
 - 330 W
 - Automotive
 - NO
 - t(r)
 - 13 nS
 - td(off)
 - 360 nS
 - td(on)
 - 34 nS
 - Mounting
 - SMD
 - RoHS Status
 - RoHS-conform
 - Technology
 - TRENCHSTOP
 - Tipo di confezione
 - TUBE
 
- Articolo produttore
 - SP005578267
 - EAR99
 - Numero di tariffa doganale
 - 85412900000
 - Stato
 - China
 - Tempo di consegna standard
 - 21 Settimane
 
								1200 V, 40 A IGBT with anti-parallel diode in TO-247 4pin package
        
            
              
                
              
          
        
            
                
                  
                    
                  
              
            
                
                  
                    
                  
              
            
        
    
	
	
		
			  
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											Hard-switching 1200 V, 40 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
Summary of Features
- Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
 - Fast switching behavior with low EMI emissions
 - Optimized diode for target applications, resulting in low Qrr
 - Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior
 - Offering Tj(max) of 175 °C
 
Benefits
- Technology with the highest power density with up to 140 A rating
 - Optimized performance in application conditions
 - Lowest conduction losses
 - Lowest switching losses
 - Humidity robustness under harsh environment
 - Improved EMI performance
 - Kelvin emitter pin brings additional reduction of total switching losses compare to 3 pin