IKW75N65EL5
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Produttore: INFINEON
Matchcode: IKW75N65EL5
Rutronik No.: IGBT2016
VPE: 30
MOQ: 240
dimensioni: TO247-3
confezione: TUBE
IGBT 650V 75A 1,1V TO247-3 Descrizione
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.10V for 75A IGBT.
Summary of Features
- Lowest saturation voltage V CE(sat) of only 1.05V
- Low switching losses of 1.6mJ @ 25°C for 30A IGBT
- High thermal stability of electrical parameters - only 2% drift with T j increase from 25°C to 175°C
- Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package
Benefits
- Higher efficiency for 50Hz
- Longer lifetime and higher reliability of IGBT
- High design reliability due to stable thermal performance
Target Applications
- UPS
- Solar
- Welding |delimiter|
Parametri
- V(CE)
- 650 V
- I(C)
- 75 A
- V(CEsat)
- 1.1 V
- Package
- TO247-3
- Bodydiode
- YES
- P(tot)
- 268 W
- Automotive
- NO
- t(r)
- 50 nS
- td(off)
- 275 nS
- td(on)
- 40 nS
- Mounting
- THT
- RoHS Status
- RoHS-conform
- Technology
- fast
- Tipo di confezione
- TUBE
- Articolo produttore
- SP001174464
- EAR99
- Numero di tariffa doganale
- 85412900000
- Stato
- China
- Tempo di consegna standard
- 24 Settimane
