IKW50N60TFKSA1
										
																					IKW50N60TFKSA1
												
													Description: 
													IGBT 600V 80A 1.5V TO247-3
												
																									
														Produttore:
																																											INFINEON
																											
																																					
														Matchcode:
														IKW50N60T
													
																																					
														Rutronik No.:
														IGBT1091
													
																																				
													VPE:
													30
												
																									
														MOQ:
														240
													
																																					
														dimensioni:
														TO247-3
													
																																					
														confezione:
														TUBE
													
																							
										
																		
										
										
											Trova alternative
										
									
																																				
										
										
											
												datasheet/scheda tecnica
										
									
																	
							
																			
											
											
												aggiungi al progetto
											
										
																				
											
											
												Campionature
											
										
																																					
										
											
										
									
									
										
									
								
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- V(CE)
 - 600 V
 - I(C)
 - 50 A
 - V(CEsat)
 - 1.5 V
 - Package
 - TO247-3
 - Bodydiode
 - YES
 - P(tot)
 - 333 W
 - Automotive
 - NO
 - t(r)
 - 29 nS
 - td(off)
 - 299 nS
 - td(on)
 - 26 nS
 - Mounting
 - THT
 - RoHS Status
 - RoHS-conform
 - Technology
 - TrenchStop
 - Tipo di confezione
 - TUBE
 
- Articolo produttore
 - SP000054888
 - EAR99
 - Numero di tariffa doganale
 - 85412900000
 - Stato
 - China
 - Codice- ABC
 - A
 - Tempo di consegna standard
 - 21 Settimane
 
								Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
											Summary of Features
- Lowest V CEsat drop for lower conduction losses
 - Low switching losses
 - Easy parallel switching capability due to positive temperature coefficient in V CEsat
 - Very soft, fast recovery anti-parallel Emitter Controlled Diode
 - High ruggedness, temperature stable behavior
 - Low EMI emissions
 - Low gate charge
 - Very tight parameter distribution
 
Benefits
- Highest efficiency – low conduction and switching losses
 - Comprehensive portfolio in 600V and 1200V for flexibility of design
 - High device reliability