IPD80R1K4CEATMA1
 
										 
																					IPD80R1K4CEATMA1
												
													Description: 
													N-CH 800V 3,9A 1400mOhm TO252-3
												
																									
														Produttore:
																																											INFINEON
																											
																																					
														Matchcode:
														IPD80R1K4CE
													
																																					
														Rutronik No.:
														TMOSP11373
													
																																				
													VPE:
													2500
												
																									
														MOQ:
														2500
													
																																					
														dimensioni:
														DPAK
													
																																					
														confezione:
														REEL
													
																							
										
																		
										
										
											Trova alternative
										
									
																																				
										
										
											
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												aggiungi al progetto
											
										
																				
											
											
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- Configuration
- N-CH
- V(DS)
- 800 V
- I(D)at Tc=25°C
- 3.9 A
- RDS(on)at 10V
- 1400 mOhm
- Q(g)
- 23 nC
- P(tot)
- 63 W
- R(thJC)
- 2 K/W
- Logic level
- NO
- Mounting
- SMD
- Technology
- CoolMOS CE
- Fast bodydiode
- NO
- Automotive
- NO
- Package
- DPAK
- RoHS Status
- RoHS-conform
- Tipo di confezione
- REEL
- Articolo produttore
- SP001130972
- EAR99
- Numero di tariffa doganale
- 85412900000
- Stato
- China
- Codice- ABC
- B
- Tempo di consegna standard
- 28 Settimane
								800V CoolMOS™ CE is Infineon’s high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS™ family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation.
											Summary of Features
- Low specific on-state resistance (R DS(on)*A)
- Very low energy storage in output capacitance (E oss) @ 400V
- Low gate charge (Q g)
- Field-proven CoolMOS™ quality
- CoolMOS™ technology has been manufactured by Infineon since 1998
Benefits
- High efficiency and power density
- Outstanding price/performance
- High reliability
- Ease-of-use
Target Applications
- LED lighting
 
                             
					
					
				 
					 
					 
					 
					