A4G16QA8BVWESO
										
																					A4G16QA8BVWESO
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- Capacity
 - 16 GB
 - Temp.max.
 - 85°C
 - Layout
 - SO-DIMM
 - Temp.min.
 - 0°C
 - Clockfrequency
 - 3200 MHZ
 - ECC
 - NO
 - Voltage
 - 1.2
 - Pins
 - 260
 - Registered
 - NO
 - Automotive
 - NO
 - RoHS Status
 - RoHS-conform
 - Tipo di confezione
 - TRAY
 
- EAR99
 - Numero di tariffa doganale
 - 84733020000
 - Stato
 - Taiwan
 - Codice- ABC
 - A
 - Tempo di consegna standard
 - 16 Settimane
 
Key features
- Density: 2 GB to 128 GB
 - Increased performance and bandwidth (up to 3200 MT/s)
 - Decreased voltage for better power consumption
 - Provides better reliability, availability and serviceability (RAS) and improves data integrity
 
ATP's fourth-generation industrial DDR memory combines up to 3200 MT/s data transfer rate and a mere 1.2V power consumption to deliver faster performance at higher power savings over earlier DRAM technologies.
As the evolutionary transition from DDR3, DDR4 supports features and functions that are well-suited for increasing bandwidth capabilities to support the growth of online traffic.
DDR4-3200 MT/s is the newest generation of fast, performance-oriented DRAM modules optimized for the latest Intel® Xeon® Platinum, Gold, Silver and Bronze Scalable processors and 8th-generation Intel® Core™ i7/i5/i3 processors. The increased interface speed from 2400 MT/s to 3200 MT/s amplifies theoretical peak performance by 20% and gives a boost to the most critical computing applications in industries such as telecommunication infrastructures, networking storage systems, network-attached storage (NAS) servers, micro/cloud servers, and embedded systems like industrial PCs.
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    A4G16QA8BVWESO16 GB DDR4-3200 SO-DIMM 1.2 V
                    
                N° d’articolo:
                DISMOD2428
            
                                            
                confezione:
                TRAY
            
             
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